IPU25CN10N G datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

О ДАТАШИТЕ

• Маркировка
  IPU25CN10N G
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPU25CN10N G Configuration: Single Continuous Drain Current: 35 A Drain-source Breakdown Voltage: 100 V Factory Pack Quantity: 1500 Fall Time: 3 ns Forward Transconductance Gfs (max / Min): 38 S / 19 S Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-251 Power Dissipation: 71 W Product Category: MOSFET Resistance Drain-source Rds (on): 25 mOhms Rise Time: 4 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 13 ns RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 25 mOhms Forward Transconductance gFS (Max / Min): 38 S / 19 S Typical Turn-Off Delay Time: 13 ns
• Количество страниц
  12 шт.
• Форматы файла
  HTML, PDF

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